Integrated circuit having conductors of enhanced cross-sectional area
摘要
A interconnect structure is provided having a conductor with enhanced thickness. The conductor includes an upper portion and a lower portion, wherein the lower portion geometry is sufficient to increase the current-carrying capacity beyond that provided by the upper portion. The lower portion is formed by filling a trench within an upper dielectric region, and the upper portion is formed by selectively removing a conductive material from the upper dielectric surface except for regions directly above the lower portion. The upper and lower portions thereby form a conductor of enhanced cross-section which can be produced by modifying a via-etch mask, rather than having to reconfigure and/or move interconnect features formed by a metal mask.
申请公布号
US5854515(A)
申请公布日期
1998.12.29
申请号
US19960685143
申请日期
1996.07.23
申请人
ADVANCED MICRO DEVICES, INC.
发明人
BANDYOPADHYAY, BASAB;FULFORD, JR., H. JIM;DAWSON, ROBERT;HAUSE, FRED N.;MICHAEL, MARK W.;BRENNAN, WILLIAM S.