Method for forming capacitor of semiconductor device

摘要

A method for forming a capacitor of a semiconductor device, by which a three dimensional structure of a storage electrode occupying small space but having a great surface area is formed between word lines or bit lines. According to the method, an additional planarization layer is not formed on the word lines or the bit lines, so as to make the three dimensional structure high. Thus, the storage electrode comes to have an enlarged surface area enough to allow the formation of a capacitor with a sufficient capacitance for the high integration of semiconductor devices and thus to improve the properties and the reliability of semiconductor devices.