Dummy wafer

摘要

A dummy wafer for use in a process for thin film formation on a wafer, which is made of a silicon carbide obtained by reacting a glassy carbon with silicon or with a silicon-containing gas, or comprises (1) a silicon carbide obtained by reacting a glassy carbon with silicon or with a silicon-containing gas and (2) a silicon carbide layer formed thereon by CVD. This dummy wafer alleviates the problems of the prior art; shows no warpage and contains no metal to become a contamination source for a semiconductor; has corrosion resistance to hydrofluoric acid, hydrochloric acid, etc., heat resistance and resistance to repeated heat cycles; and is inexpensive.