| 摘要 |
PURPOSE:To suppress the dispersion in the threshold voltage in a bottom gate type thin film transistor. CONSTITUTION:In the manufacturing step of a semiconductor device having a bottom gate type thin film transistor, a silicon oxide film as a gate insulating film formed by CVD step is to be immersed in heated sulfuric acid/hydrogen peroxide mixed solution before the deposition of a silicon thin film to be a channel region. Through these procedures, a stabilized silicon/silicon oxide film interface can be formed thereby making the dispersion possible in the threshold value of the thin film transistor to be suppressed. |
