VORRICHTUNG UND VERFAHREN ZUM HERSTELLEN VON SiC-EINKRISTALLEN

摘要

PCT No. PCT/DE94/00311 Sec. 371 Date Sep. 29, 1995 Sec. 102(e) Date Sep. 29, 1995 PCT Filed Mar. 21, 1994 PCT Pub. No. WO94/23096 PCT Pub. Date Oct. 13, 1994SiC single crystals are produced in a reaction chamber, in which there is a seed crystal for the separation of a SiC single crystal from the gas phase. The reaction chamber is connected to a storage chamber, which is at least partly filled with a supply of SiC, by a gas channel with a predetermined cross-section for conveying the SiC in the gas phase. The supply of SiC is sublimated in a heating device and a temperature gradient is adjusted in the reaction chamber. It is, thus, possible to produce SiC single crystals with any desired cross-sectional area and of high crystalline quality and single-crystal yield, because the conveyance rate of the gas molecules can be precisely adjusted.