Schnittverfahren für kapazitiven Microsensor

摘要

The present invention relates to a method of manufacture of a capacitive microsensor, consisting in assembling three wafers of silicon which are separated from each other, at least at their periphery, by an insulating band, each of these wafers initially forming part of a slice of silicon, individual devices being formed by cutting the set of slices. The said cutting comprises the steps consisting in cutting out the outer wafers by chemical etching and in cutting out the central wafer along a contour which projects with respect to the outer wafers.