| 发明名称 |
SEMICONDUCTOR LASER |
| 摘要 |
<p>A semiconductor laser includes at least an active layer and a saturable absorbing layer, and a compressive strain amount in the saturable absorbing layer is set to be greater than a value of compressive strain in the active layer by about 0.3% or more. Alternatively, a semiconductor laser includes at least an active layer, a saturable absorbing layer, and a light guiding layer disposed in the vicinity of the saturable absorbing layer; and a compressive strain amount in the saturable absorbing layer is greater than a value of compressive strain in the active layer by about 0.3% or more. <IMAGE></p> |
| 申请公布号 |
EP0886351(A1) |
申请公布日期 |
1998.12.23 |
| 申请号 |
EP19970903649 |
申请日期 |
1997.03.03 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ADACHI, HIDETO;KIDOGUCHI, ISAO;KUMABUCHI, YASUHITO |
| 分类号 |
H01S5/062;H01S5/065;H01S5/20;H01S5/223;H01S5/32;H01S5/343;(IPC1-7):H01S3/18 |
主分类号 |
H01S5/062 |
| 代理机构 |
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| 地址 |
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