Semiconductor device and methods for producing and mounting the semiconductor device

摘要

A high frequency and high output semiconductor chip includes a semiconductor substrate (1) having an active element on a front surface thereof and a supporting substrate (101a) for supporting the semiconductor substrate (1) disposed on a rear surface of the semiconductor substrate (1). The supporting substrate (101a) comprises a radiating layer (77) for radiating heat generated by the active element, disposed on a part of the rear surface of the semiconductor substrate (1) directly opposite the active element, and a plated metal layer (79) comprising Rh, Pt, or Ni-B-W having a linear thermal expansion coefficient approximately equal to that of the semiconductor substrate (1), disposed on part of the rear surface of the semiconductor substrate (1) but not directly opposite the active element. In this structure, the curvature of the semiconductor chip during the die-bonding is reduced. The plated metal layer (79) is produced in a relatively simple process with no difficulty in controlling the composition of the plating solution. As a result, a semiconductor chip with improved heat radiation characteristics and RF characteristics is achieved.