发明名称 |
Semiconductor circuit device capable of reducing influence of a parasitic capacitor |
摘要 |
In a semiconductor circuit device comprising a differential amplifier circuit, which is formed on a semiconductor substrate and which comprises first and second input terminals, and a circuit element formed on the semiconductor substrate and connected to one of the first and the second input terminals. A dummy circuit element is formed on the semiconductor substrate so as to adjoin the circuit element for forming between the dummy circuit element and the semiconductor substrate a dummy parasitic capacitor which is equivalent to a parasitic capacitor formed between the circuit element and the semiconductor substrate. The dummy circuit element is connected to another one of the first and the second input terminals. <IMAGE> |
申请公布号 |
EP0886314(A1) |
申请公布日期 |
1998.12.23 |
申请号 |
EP19980116106 |
申请日期 |
1994.06.24 |
申请人 |
NEC CORPORATION |
发明人 |
NARAHARA, TETSUYA;MATSUBARA, YASUSHI |
分类号 |
H01L23/64;H01L27/06;H01L27/07;H03F3/45 |
主分类号 |
H01L23/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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