| 摘要 |
The invention relates to a control circuit for a non-volatile semi-conductor memory system, comprising a level transformer circuit (10) which applies an output value (D, DN) and a complementary output value (D) to a digit line and or a word line of the volatile semi-conductor memory system, said complementary output value (D) being complementary to the first output value (D, DN). An interlocking circuit (11) is located between an input circuit (12) and the level transformer circuit (10), said interlocking circuit (11) temporarily storing the data which is to be stored in the semi-conductor memory system. |
