| 摘要 |
<p>The recombination-enhanced degradation of the p-type heterointerface active layer or confining layer, of a double heterostructure (DH) light-emitting semiconductor device can be minimized by using hole injection into an n-type DH from a remote p-type hole injection layer. The hole injection layer is designed to achieve an acceptable hole injection efficiency and minimize optical absorption. The doping level and the species are selected to accurately control the p-n junction position. <IMAGE></p> |
