发明名称 Elastic surface-wave device
摘要 A surface acoustic wave element includes a LiNbxTa1-xO3 ("x' is 0 or more and 1 or less) film on a (012) sapphire substrate, in which a Love wave is propagated as a surface acoustic wave in a specific direction of the LiNbxTa1-xO3 film. Preferably, a crystal axis of the sapphire substrate and a crystal axis of a (012) LiNbxTa1-xO3 film ("x' is 0 or more and 1 or less) are parallel to each other; a surface acoustic wave propagation direction is within a range of ±20 degrees around an axis vertical to a C-axis projection line direction of a crystal axis of the sapphire substrate or the (012) LiNbxTa1-xO3 film. Alternatively, a C-axis projection line direction of a crystal axis of the sapphire substrate and a C-axis direction of a crystal axis of a (100) LiNbxTa1-xO3 film ("x' is 0 or more and 1 or less) are parallel to each other, and the surface acoustic wave propagation direction is within a range of ±35 degrees around an axis vertical to a C-axis projection line direction of a crystal axis of the sapphire substrate. A piezoelectric substrate preferably has an intermediate layer including of a metal or a metal oxide between the sapphire substrate and the (100) LiNbxTa1-xO3 ("x' is 0 or more and 1 or less).
申请公布号 AU7548998(A) 申请公布日期 1998.12.21
申请号 AU19980075489 申请日期 1998.06.02
申请人 ASAHI KASEI KOGYO KABUSHIKI KAISHA 发明人 YOSHIHIKO SHIBATA;NAOHIRO KUZE
分类号 H03H9/02 主分类号 H03H9/02
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