| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile memory cell which can be electrically erased and measured freely. SOLUTION: This non-volatile memory cell, which can be measured freely, has a cell formed in a tripple well. Negative bias can be applied on a control gate 12. A GIDL(gate induction drain leakage) and the deterioration caused by Hall seizure can be reduced by applying positive bias in the specific voltage range, and the technique, with which scale can be changed freely, can be accomplished.</p> |
