CHARGE PUMP CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To output a booster voltage to an output node of a load without loss, which is created by operating a regulator, oscillator, high voltage detector section and charge pump by using a power supply voltage. SOLUTION: A controller 23 is driven by a high-level ON signal LON input from a regulator 22 and is triggered by the edge of a RAS bar RASB signal input from the external of a chip and then outputs a high-level RAS pulse signal PASP. When a high-level ON signal LON from the regulator 22 inputs, then an oscillator 24 outputs an oscillation pulse signal OSCH of a predetermined period. When the RAS pulse signal RASP and an oscillation pulse OSCH inputs, a charge pump 25 performs the pumping operation up to a desired booster voltage VPP and stops the pumping operation when a high-level high voltage detection signal HVDET from a high voltage detecting section 21 inputs. A pull-up transistor 26 turns the booster voltage VPP of initial power up into a potential VDD-Vt.