| 摘要 |
PROBLEM TO BE SOLVED: To improve the level of integration and capacitor capacitance, by providing a capacitor with a lower electrode having a side surface which is vertical to a semiconductor substrate surface and has a height longer than the short side width of the upper surface, and an upper electrode which faces a capacitor dielectric film and the upper surface and the side surface of the lower electrode. SOLUTION: A transistor(Tr) 37 constituted of a gate electrode 34, a source region 35 and a drain region 36 is formed on a semiconductor substrate 31. An interlayer insulating film 41, polysilicon 42 and barrier metal 43 are formed on the Tr 37, A lower electrode 44a is formed on the barrier metal 43. The lower electrode 44a has a side surface which is vertical to the semiconductor substrate 31 surface and has a height longer than the short side width of the upper surface. On the upper surface and the side surface of the lower electrode 44a, a plate capacitor 47 constituted of a capacitor dielectric film 45 and an upper electrode 46 is formed. When the Tr 37 is turned on and off by an input voltage of the gate electrodep 34, electric charge of the capacitor 47 is charged and discharged, and information is stored. |
