| 摘要 |
PROBLEM TO BE SOLVED: To improve a light emission diode in luminous efficiency by a method wherein a (Al0.3 Ga0.7 )0.5 InP9.5 layer is made to serve as a light emitting layer, and a current diffusion layer subjected to mesa etching is used. SOLUTION: Light emission elements are arranged nearly in a straight line on a first conductivity-type substrate 10 and each equipped with at least a first conductivity-type clad layer 12, an active layer 13 of ((Alx Ga1-x )y In1-y P (0<=x<=1, 0<=y<=1), a second conductivity-type clad layer 14, and a second conductivity-type current diffusion layer 15 which are successively laminated on the substrate 10, where the light emission part of the adjacent light emission elements are electrically isolated form each other. In this case, the adjacent second conductivity-type current diffusion layers 15 are physically isolated from each other by mesa etching. |
