| 摘要 |
PROBLEM TO BE SOLVED: To improve the resistance temperature coefficient of a bolometer titanium, by forming an insulating protection film at a specific growing temperature on a titanium thin film which is a bolometer material. SOLUTION: A silicon oxide film 7 is grown on the whole plane and an aluminum wirings 8 and 8' are formed on the silicon oxide film 7 to be electrically connected with a part of a scanning circuit. Bolometer titanium 9 is deposited, for instance, by sputtering, and a pattern of the bolometer is formed by photoresist method and selective etching. Then, a low-temperature growing insulating protection film 12 made of 1μm thick silicon oxide film is deposited for covering titanium by plasma CVD method at 300 deg.C or below. When the titanium growing temperature becomes higher than 300 deg.C, titanium resistance temperature coefficient becomes lower than the resistance temperature coefficient of titanium exposed before growing the insulating protection film. Therefore, the resistance temperature coefficient of bolometer titanium can be improved by forming the insulating protection film at 300 deg.C or below.
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