| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor capacitive element structure which is lessened in leakage current and a manufacturing method thereof, wherein the semiconductor capacitive element structure is provided with a lower electrode which is processed in three dimensions and a capacitor film of high permittivity. SOLUTION: A semiconductor capacitive element is equipped with a three- dimensional lower electrode 104 provided onto a semiconductor substrate 101 through an interlayer insulating film 102, a high-permittivity capacitor film 106, and an upper electrode 107 which covers the high-permittivity capacitor film 106. In this case, the lower electrode 104 is formed nearly like a rectangular parallelopiped, and an insulating film 105 is provided in contact with the upside of the lower electrode 104, and the high-permittivity capacitor film 106 is formed so as to cover the lower electrode 104 and the insulating film 105. |
