| 摘要 |
PROBLEM TO BE SOLVED: To wire power lines for supplying electric power to a static memory at low resistance values, by forming word lines arranged on a static memory cell and the power lines in the same pattern through the etching process of the same mask. SOLUTION: A titanium silicide film, a silicon oxide film, and a tungsten polycide film are worked in the same pattern by using the photolithography technology and dry etching technology. Consequently, word lines 7-7b, inter- wiring insulating films 8-8b, and power lines 9-9b are formed in the same shape. Therefore, the resistance values of the work lines and power lines of a static memory cell can be reduced easily. In addition, the wiring density of the power lines and word lines of the memory cell can be increased and the wires can be reduced in thickness. Moreover, the manufacturing process of such a static memory cell can be simplified. |
