SEMICONDUCTOR DEVICE AND ITS MANUFACTURE, AND TFT TYPE LIQUID CRYSTAL DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain the semiconductor device which can decrease a leak current and make variance of transistor characteristics small by stabilizing the boundary surface between a gate insulating film and a polycrystalline silicon film and is simple in manufacture process by forming an amorphous silicon film containing hydrogen between a polycrystalline silicon film and a gate insulating film. SOLUTION: A two-layered structure film is laminated on a glass substrate 1 in the order of the polycrystalline silicon film 13' and amorphous silicon film 13. Then the gate insulating film 15 is formed on the amorphous silicon film 13, a gate electrode 16 is formed on the gate insulating film 15, and an inter-layer insulating film 17 is formed on the gate electrode 16. A source-drain wire electrode 19 is connected to the amorphous silicon film 13 through the inter-layer insulating film 17. Namely, this semiconductor device has the boundary surface between the gate insulating film 15 and polycrystalline silicon film 13 stabilized with hydrogen that the amorphous silicon film 13 contains since the amorphous silicon film 13 containing the hydrogen is formed between the polycrystalline silicon film 13' and gate insulating film 15.