ANTIFUSE STRUCTURE AND ITS FABRICATION PROCESS

摘要

PROBLEM TO BE SOLVED: To provide an antifuse structure and method for personalizing a semiconductor device which can overcome the limitations of the prior art. SOLUTION: An antifuse 100 of the preferred embodiment comprises a two layer transformble insulator core between two electrodes 102, 104. The transformable insulator core is normally non-conductive but can be transformed into a conductive material by supplying a sufficient voltage across the electrodes 102, 104. The two layer core preferably comprises an injector layer 106 and a dielectric layer 108. The injector layer 106 preferably comprises a two phase material such as silicon rich nitride or silicon rich oxide. Initially, the injector layer 106 and the dielectric layer 108 are non-conductive. When a sufficient voltage is applied, the core fuses together and becomes conductive.