| 摘要 |
<p>PROBLEM TO BE SOLVED: To facilitate dealing with the production dispersion or characteristic degradation of non-volatile memory, by storing control data such as the level or time of write voltage of non-volatile memory, the level or time of erasing voltage and the level of reference voltage of a sense amplifier in a specified area of non-volatile memory. SOLUTION: A non-volatile memory 7 is composed of a flash memory, which can electrically erase data and repeatedly write/read data, and in which program data for controlling the operation of one-chip microcomputer are mainly stored. Then, control data A for controlling the level or time of write voltage of the non-volatile memory 7, control data B for controlling the level or time of erasing voltage of the non-volatile memory 7 and control data C for controlling the level of reference voltage Vref of a sense amplifier 6 at the time of reading the non-volatile memory 7 are respectively written in specified address areas (a)-(c) of this non-volatile memory 7.</p> |
