MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent a metal film from being oxidized in a light oxidation process after a gate patterning operation is carried out and to control the formation of an oxide film on the edge of a gate side wall to be high in reproducibility and uniform in thickness in a gate forming process where poly metal is used. SOLUTION: A gate electrode of poly-metal structure deposited on a semiconductor wafer 1A where a gate oxide film is formed is patterned into a gate electrode, and then hydrogen gas with a low concentration of water made from hydrogen and oxygen by the use of catalyst is supplied to the main surface of the semiconductor wafer 1A or its vicinity heated at a prescribed temperature to selectively oxidize the main surface of the semiconductor wafer 1A, whereby the side wall edge of the gate electrode is improved in profile.