| 摘要 |
PROBLEM TO BE SOLVED: To increase capacitor capacitance by implanting impurities in a polysilicon film, oxidizing the polysilicon film, forming an uneven part on the interface between an oxide film and the polysilicon film, and forming a charge storing electrode of the polysilicon film. SOLUTION: After an LOCOS oxide film 2 is formed on a semiconductor substrate 1, a gate insulating film and the like are formed, and further a gate electrode 4 is formed. By using the gate electrode as a mask, an N<+> source/drain diffusion layer 6 is formed. An interlayer insulating film contact hole is formed. An oxide film 11 is formed by thermal oxidation. A rugged nart 12 is formed on the surface of a polysilicon film 10 by thermal oxidation, and the oxide film 11 is eliminated. By patterning the polysilicon film 10, a charge storing electrode 13 of a capacitor which electrode comes into contact with the source/ drain diffusion layer 6 is formed. A capacitor insulating film 14, a counter electrode 15, an interlayer insulating film 16 and wiring 17 for a bit line are formed. |
