| 摘要 |
PROBLEM TO BE SOLVED: To provide the semiconductor substrate material, having the thermal conductivity of 100 W/mK or higher and the thermal expansion coefficient of 20×10<-6> / deg.C or lower and consisting of Al-SiC composite alloy of light weight and uniform composition, the semiconductor substrate, and semiconductor device using the above-mentioned material, and to provide the manufacturing method of the above-mentioned material, semiconductor substrate and device. SOLUTION: This semiconductor substrate material is composed of an Al-SiC composite alloy which is manufactured by a sintering method, the SiC of 10 to 70 wt.%, which is dispersed in particle-like form, is present in Al or Al alloy, and the difference of SiC quantity in Al-SiC alloy composition should be within 1 wt.%. This semiconductor substrate material is used as the semiconductor substrate of a semiconductor device in the state as it is or by providing the surface treatment such as Al coating layer, etc., on the surface. |
