| 摘要 |
PROBLEM TO BE SOLVED: To prevent the surface roughening of the transparent part of a halftone phase shift photomask and to eliminate trouble which affects the phase difference of light passing through the translucent and transparent parts, effect on the transmissivity of the transparent part, etc. SOLUTION: A transparent substrate 1 disclosed from a resist pattern 3 is removed by a prescribed depth by dry etching with an etching gas 5 to form a phase shift pattern, a translucent film 2 is formed on the entire surface by sputtering, vapor deposition or other method without removing the resist pattern 3 and then the resist layer 3 is removed by lift-off. The translucent film 2 forming a translucent region is left on the bottom 6 of the phase shift pattern and the objective halftone phase shift photomask is produced. |
