| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a tandem-type solar cell which is lessened in manufacturing cost and kept source-saving keeping high in conversion efficiency. SOLUTION: A lower electrode layer 3 is formed on a substrate 1 through the intermediary of an insulating layer 2. H ions are implanted in a P-type single crystal silicon board 4 in layers as deep as 5 to 10μm. The single crystal board 3 where H ions are implanted is bonded onto the lower electrode layer 3. Gaps distributed in layers are formed through a thermal treatment in an atomic hydrogen region 5 provided in the single crystal board 3 by implantation of hydrogen ions, the single crystal silicon layer 4 is divided into a P-type single crystal silicon layer 4a bonded onto the lower electrode layer 3 and a residual P-type single crystal silicon 4b by cutting it at a region 5a where gaps are distributed in layers. Through a thermal treatment, P-type impurities are diffused into the P-type single crystal silicon layer 4a from the lower electrode layer 3 for the formation of a P<+> -type diffusion layer. An N<+> -type single crystal silicon layer, a P-type amorphous silicon layer, and an N-type amorphous silicon layer are successively formed on the P<+> -type diffusion layer.
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