| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent generation of noises between data lines via a parasitic capacity at the data lines, thereby eliminating wrong read, by changing a switching element set between a sense amplifier and the data line from an on state to an off state after transmitting a potential of the data line to the sense amplifier, and supplying an operation voltage to the sense amplifier. SOLUTION: At the data write time, a negative voltage, e.g. approximately -10V is impressed to a word line to which a memory cell to be selected is connected, and at the same time, a data line DL corresponding to the memory cell to be selected is turned to a potential, e.g. approximately 4 V. Furthermore, a selection switch MOSFETQs1 on a local drain line LDL connected to the selection memory cell is turned on. Approximately 4 V is consequently impressed to a drain. At this time, a selection switch MOSFETQs2 on a local source line LSL is kept off.</p> |
