NITRIDE GALLIUM BASED COMPOUND SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To manufacture a light emitting element which has a proper ohmic contact even if an electrode is thickly formed and can equally emit and receive light by the electrode containing a forth element which has a larger first ionized potential and/or a larger electric negative degree than nickel, gold and oxygen. SOLUTION: A wafer having a double hetero structure in which an n-type GaN layer 2 and p-type GaN layer 3 are laminated in order is prepared on a supphire substrate 1. Next a mask is formed on a surface of the p-type GaN layer 3, a partial etching is made in the depth direction from the p-type GaN layer 3 side and a part of the n-type GaN layer 2 is exposed. Next Al is evaporated as an n-type electrode 4 on the surface of the p-type GaN layer 3. Further a p-electrode is made on the whole surface of the p-type GaN layer 3 by evaporating and laminating CuOx(0