发明名称 POLISHING APPARATUS AND METHOD
摘要 PROBLEM TO BE SOLVED: To effectively give a more pressure to a part of a wafer which is desired to be pressed with a more pressure so as to easily improve the amount of abrasion in uniformity throughout the surface of the wafer, by a method wherein a mechanism which sucks a part of the rear of the wafer and gives a pressure to the rest of the rear is provided. SOLUTION: Pressing flow paths 6 are provided inside a carrier 2 and communicate with a part near the rear center of a wafer 1, and the rear center of the wafer 1 can be pressed with N2 gas through the pressing flow paths 6. On the other hand, vacuum chuck flow paths 7 are provided inside the carrier and communicate with a part near the periphery of the rear of the wafer 1, the periphery of the wafer 1 is vacuum-chucked through the vacuum chuck flow paths 7 when the wafer 1 is subjected to polishing, and then the carrier 2 and a platen 8 are rotated at the same time. At this point, polishing liquid starts to be fed onto a polishing cloth 9, and the carrier 2 touches down a polishing cloth 9.
申请公布号 JPH10335277(A) 申请公布日期 1998.12.18
申请号 JP19970140658 申请日期 1997.05.29
申请人 SEIKO EPSON CORP 发明人 ASAGA TATSUYA
分类号 B24B37/005;B24B37/30;H01L21/304 主分类号 B24B37/005
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