| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device, which increases the radical generating efficiency and which can perform the processing at a high speed, by supplying the gas from a central part of a processing chamber toward a plasma generating area. SOLUTION: The gas 16 from a gas supplying port 4 is passed through a flow passage 17 inside a baffle plate 15, and led into a plasma 11 through a gas lead-in port 18 provided in a central part of the baffle plate 15. The gas 16 flows inside a plasma generating area from a central part of a processing chamber 1 to the peripheral part, and passes through distribution holes 19 of the baffle plate 15, and is discharged from a vacuum discharge port 3. With this structure, since almost of the gas 16 passes through inside the plasma generating area, radical can be efficiently generated. As a result, a material 12 to be processed can be processed for ashing at a high processing speed. In the case where a space between a quartz window 2 and the baffle plate 15 is reduced to a degree that the plasma 11 contacts with the baffle plate 15, almost of the gas 16 passes through the plasma 11 generating area and radical can be most efficiently generated. |
