| 摘要 |
PROBLEM TO BE SOLVED: To improve energy dissolution, by forming a semiconductor element, which generates a pair of electron holes by X ray incidence, by using black phosphorus. SOLUTION: A semiconductor element 1 is formed of black phosphorus single crystal, and a pin-type structure that includes a p-layer close to the front plane (X ray incidence plane), an n-layer close to the rear plane and an i-layer, i.e., an intrinsic region, between the both layers, is formed. Black phosphorus has an approximately 1/4 band gap compared with that of silicon and is known as a narrow band gap semiconductor. FluctuationΔEd is in proportion toεto the 1/2 power, whereεis an energy generated by a pair of electron holes. When a Fano factor does not change, the fluctuationΔEd of black phosphorus becomes approximately 1/2, compared with that of silicon. The amplitude of a signal obtained from a semiconductor element is in proportion to the energyε. Therefore, when the electric noise is fixed, theΔEp becomes approximately 1/4. As the fluctuationsΔEd andΔEp become smaller than those of silicon, the energy disolution of the entire measurement system can be improved.
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