HIGH POWER DIODE TYPE LASER DEVICES

摘要

Diode type laser devices (diode lasers) with nonabsorbing windows that are obtained in low confinement asymmetric structures, asymmetric structures that consist of a waveguide and an active region, the active region being situated asymmetrically relative to the waveguide, at an extremity of the waveguide central layer, outside, at the margin or inside the waveguide central layer. The nonabsorbing mirrors are obtained by the partial etching of the diode lasers layered structures, by this etching the active region being removed but in a large extent the layered structure remaining unaffected, and by the regrowth of a material with an adequate crystalline structure and nonabsorbing for the radiation emitted by the laser. By etching - regrowth processes the optical properties of the waveguide are reconstructed in a large extent, so that the radiation propagates to the mirror into a waveguide similar with the waveguide of the rest of the laser.