发明名称 Verfahren zur Herstellung eines bipolaren Transistors
摘要
申请公布号 DE69129379(T2) 申请公布日期 1998.12.17
申请号 DE1991629379T 申请日期 1991.03.28
申请人 NATIONAL SEMICONDUCTOR CORP., SANTA CLARA, CALIF., US 发明人 SOLHEIM, ALAN G., OUTLOOK, SASKATCHEWAN SOL2NO, CA;BASTAMI, BAMDAD, DANVILLE, CA 94506, US;BOUKNIGHT, JAMES L., PUYALLUP, WA 98374, US;GANSCHOW, GEORGE E., PUYALLUP, WA 98374, US;DELONG, BANCHERD, PUYALLUP, WA 98374, US;LAHRI, RAJEEVA, FREMONT, CA 94539, US;LEIBIGER, STEVE M., GRAHAM, WA 98338, US;BLAIR, CHRISTOPHER S., PUYALLUP, WA 98374, US;JEROME, RICK C., PUYALLUP, WA 98374, US;BISWAL, MADAN, PUYALLUP, WA 98374, US;DAVIES, TAD, PUYALLUP, WA 98374, US;ILDEREM, VIDA, PUYALLUP, WA 98374, US;IRANMANESH, ALI, SUNNYVALE, CA 94087, US
分类号 H01L29/73;H01L21/285;H01L21/32;H01L21/331;H01L21/762;H01L29/732;(IPC1-7):H01L21/76;H01L21/33;H01L21/302 主分类号 H01L29/73
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