Transistor component with insulated gate electrode

摘要

The component includes lateral and vertical current flow in a p-substrate (3), whose front side locates an n-region (4), into which is embedded a highly p-doped anode region (5). The vertical current flow takes place via a rear side contact (7), which is electrically coupled to the p-substrate via a highly p-doped diffusion region (8). The n-region is of resurf type, from which the anode region is separated by an n-doped buffer layer (6) with greater penetration depth than the n-region. The anode region is of strip type with several strips, with a strip-type trough (11) in between the strips.