Structured metal layer production especially on MOS structure

摘要

Production of a semiconductor structure with a structured metal layer (9) is carried out by (a) coating a region of the structure surface with a layer (7) of material having low adhesion to the metal; (b) forming, on the layer (7), spaced structure elements (8) of material having high adhesion to the metal; and (c) applying the metal layer (9) so that it only remains adhering to the structure elements (8) and the layer (7) between the structure elements due to the ratio of the metal layer thickness 'd' to the structure element spacing 'a' and the metal properties. The metal layer (9) is preferably applied by electroless plating or by vapour deposition especially of palladium, followed by selective ultrasonic removal. Preferably, a MOS transistor is formed on the semiconductor structure and the layer (7) is a gate insulation layer on which a polysilicon layer is applied to form spaced gate electrodes, corresponding to the structure elements (8).