发明名称 Insulator based on silicon dioxide and an organic polymer
摘要 An insulator having a main component of silicon dioxide is characterised by the insulator including at least one organic polymer such as benzene nuclei distributed therein in order to reduce a dielectric constant thereof The layer is formed by chemical vapour deposition and the benzene nuclei may be derived from phenyltrimethylsilane or phenyltrimethoxysilane. Other organic polymers may be based on toluene, xylene, naptholene, biphenyl or anthracene. The insulator may have pores formed therein by the removal of the organic polymer. A multi-level interconnection structure comprising at least one first level interconnection provided on an insulating layer; an insulator having a main component of silicon dioxide and including at least one organic polymer distributed therein as referred to above and having at least one via hole; and at least one second level interconnection provided on said insulator, the or each second level interconnection being electrically connected by means of a respective via hole to a respective first level interconnection.
申请公布号 GB2326168(A) 申请公布日期 1998.12.16
申请号 GB19980012436 申请日期 1998.06.09
申请人 * NEC CORPORATION 发明人 KAZUHIKO * ENDO
分类号 H01L21/768;C23C16/30;C23C16/56;H01L21/31;H01L21/312;H01L21/316;H01L23/522;H01L23/532 主分类号 H01L21/768
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