Method for driving at least one IGBT transistor able to permit its functioning under irradiation

摘要

The control procedure is applicable to an insulated gate bipolar transistor (IGBT) which is required to operated within a radiation environment. The threshold value (Vges) of the grid-emitter voltage of a first IGBT transistor (30) is measured under the effect of the radiation. The voltage applied in operation between the grid and emitter is varied by means of a second IGBT transistor subject to irradiation in order to control the threshold voltage (Vges) of this second transistor at a reference value in spite of the changes caused by irradiation. At least one of the two supply sources (Vp,Vn) applied to the grid and emitter of the second transistor may be modulated. The second transistor may also be subject to a double switching: a classical blocked-unblocked switching, and an amplitude switching caused by the threshold voltage (Vge) for the operation of the control system.