LATCH-UP FREE POWER MOS-BIPOLAR TRANSISTOR

摘要

A MOS bipolar transistor is provided which includes a silicon carbide npn bipolar transistor formed on a bulk single crystal n-type silicon carbide substrate and having an n-type drift layer and a p-type base layer. Preferably the base layer is formed by epitaxial growth and formed as a mesa. A silicon carbide nMOSFET is formed adjacent the npn bipolar transistor such that a voltage applied to the gate of the nMOSFET causes the npn bipolar transistor to enter a conductive state. The nMOSFET has a source and a drain formed so as to provide base current to the npn bipolar transistor when the bipolar transistor is in a conductive state. Also included are means for converting electron current flowing between the source and the drain into whole current for injection into the p-type base layer. Means for reducing field crowding associated with an insulating layer of said nMOSFET may also be provided.