| 摘要 |
A method for manufacturing a semiconductor device having a via hole (101b) formed by penetrating a semiconductor substrate (101a), which electrically and thermally connects an electrode (110) of an element formed on a surface of the substrate to a metal layer (112) formed on a back surface of the substrate, includes the steps of forming on the surface of the substrate a metal pattern having an opening at a region where the via hole is to be formed and connected to a part of the electrode of the element connected to the metal layer through the via hole, forming the via hole, and forming a metal film connected to the metal pattern on an inner surface of the via hole. As a result, the metal pattern can be formed using a positive resist on a flat substrate, whereby highly precise pattern can be obtained. <IMAGE> |
