发明名称 |
Wafer carrier with minimal contact |
摘要 |
A high breakdown voltage pch-MOSFET having a breakdown voltage of 150 V or more and a control element controlling the same are formed in a common n- epitaxial layer. Only an n-type region of n- epitaxial layer is distributed at a region located between the high breakdown voltage pch-MOSFET and the control element and extending along the substrate surface. A semiconductor device thus formed achieves a good throughput and reduces a required chip area. |
申请公布号 |
GB9822954(D0) |
申请公布日期 |
1998.12.16 |
申请号 |
GB19980022954 |
申请日期 |
1998.10.20 |
申请人 |
FLUOROWARE INC |
发明人 |
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分类号 |
H01L21/673;H01L27/06;H01L27/088;H01L27/092;H01L29/06;H01L29/10;H01L29/739;H01L29/78 |
主分类号 |
H01L21/673 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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