| 摘要 |
PURPOSE:To obtain a dielectric thin film excellent in electric characteristics and a thin film capacitor using said film, by forming a pair of electrodes so as to face each other via a dielectric thin film composed of specified perovskite type composition. CONSTITUTION:A dielectric thin film composed of perovskite type composition is used. Said composition is expressed by a general formula; (PbwMe1-w)v{(Zn1/3 Nb2/3)x(Mg1/3Nb2/3)yTiz}O2+v, where composition ratio is 0.8<=v<=1.5, 0.03<=w<=0.9, 0.1<=x<=0.5, 0.2<=y<=0.8, 0.02<=z<=0.5, and x+y+z=1. Me represents one out of Ba and Sr. For forming the dielectric thin film, an ordinary thin film forming method such as the following can be used; sputtering method like RF sputtering, CVD method like excimer laser CVD, and ion plating method. |
