发明名称 Method and apparatus for producing thin films using colliding currents of process gas and inert gas
摘要 <p>The present invention provides a heat treatment apparatus capable of forming a uniform thin layer on the substrate (19) provided with a furnace core pipe (9), a substrate supporting boat (11) for supporting a lot of substrates disposed in the furnace core pipe and a process gas injector pipe (13) having many blowing holes (27) for spouting the process gas toward the substrate, the supporting boat having a rotation mechanism to rotate around the normal line passing through one principal face of the substrate as a rotation axis. In the apparatus, an inert gas injector pipe (25) has the same number of inert gas or nitrogen gas blowing holes (27) as the number of process gas blowing holes and is provided at an approximately symmetrical position relative to the center line of the rotation axis. &lt;IMAGE&gt;</p>
申请公布号 EP0884407(A1) 申请公布日期 1998.12.16
申请号 EP19980110200 申请日期 1998.06.04
申请人 NEC CORPORATION 发明人 MORIYAMA, TSUYOSHI
分类号 H01L21/22;C30B31/16;H01L21/00;H01L21/31;(IPC1-7):C30B31/16 主分类号 H01L21/22
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