发明名称 |
FERROELECTRIC MEMORY DEVICE |
摘要 |
A ferroelectric memory device includes a channel layer of a dielectric material containing oxygen, source and drain electrode provided on the channel layer across a channel region defined in the channel layer, a ferroelectric memory layer provided on the channel layer so as to cover at least the channel region, and a write control electrode provided on the ferroelectric memory layer for applying an electric field thereto. |
申请公布号 |
KR0164932(B1) |
申请公布日期 |
1998.12.15 |
申请号 |
KR19950012590 |
申请日期 |
1995.05.19 |
申请人 |
FUJITSU KK |
发明人 |
GOTO, KOTARO;TAMURA, YASUTAKA;YOSHIDA, AKIRA |
分类号 |
H01L21/8247;H01L21/8246;H01L27/10;H01L27/105;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L27/108;G11C11/22 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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