发明名称 Simulation apparatus for optimizing sputtering apparatus and simulation method therefor
摘要 A simulation apparatus for simulating and optimizing a configuration of a sputtering apparatus including a target surface temperature calculating unit for calculating a temperature of a target surface in consideration of cooling of the target, an atom initial velocity calculating unit for calculating an initial velocity of atoms within the target based on the calculated target surface temperature, an ion incidence rate calculating unit for calculating an incidence rate of the incident ions into the target to determine a position at which the incident ions collide against the target, an atom trajectory calculating unit for obtaining trajectories of atoms within the target based on each of calculation results and a sputtered atom ejection angle distribution unit for extracting sputtered atoms based on the calculation results to obtain ejection angle distribution.
申请公布号 US5850356(A) 申请公布日期 1998.12.15
申请号 US19960713495 申请日期 1996.09.13
申请人 NEC CORPORATION 发明人 YAMADA, HIROAKI;OHTA, TOSHIYUKI;SHINMURA, TOSHIKI
分类号 C23C14/34;G06F17/50;H01L21/00;H01L21/203;(IPC1-7):G06F19/00 主分类号 C23C14/34
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