Method of forming silicide film on silicon with oxygen concentration below 1018/cm3,申请号US19960736907-传众专利搜索

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发明名称	Method of forming silicide film on silicon with oxygen concentration below 1018/cm3
摘要	A method for fabricating a semiconductor device of the invention, the method includes the steps of: providing an oxygen concentration in a region of a silicon film of 1x1018 cm3 or less; depositing a film including a metal on the silicon film; and reacting the silicon film with the film including a metal so as to form a metal silicide film in the region of the silicon film.
申请公布号	US5849634(A)	申请公布日期	1998.12.15
申请号	US19960736907	申请日期	1996.10.25
申请人	IWATA, HIROSHI	发明人	IWATA, HIROSHI
分类号	H01L21/225;H01L21/28;H01L21/285;H01L21/336;H01L23/48;H01L23/52;H01L29/40;H01L29/45;H01L29/49;(IPC1-7):H01L21/28	主分类号	H01L21/225
代理机构		代理人
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