Method of passivating semiconductor wafers

摘要

A method of passivating an outer portion of a semiconductor wafer comprises: a) applying and patterning a metal layer to define conductive metal runners projecting atop the wafer, the conductive metal runners projecting outwardly from the wafer at given distances; b) applying an insulating dielectric layer atop the wafer to a thickness which is greater than the given distance of a furthest projecting metal runner; c) global planarizing the insulating dielectric layer to some point on the wafer which is elevationally above the underlying conductive metal runners; the preferred method is by chemical mechanical polishing; and d) applying a planar layer of an effective mechanical protection, chemical diffusion barrier and moisture barrier material atop the globally planarized layer of insulating dielectric.