发明名称 SEMICONDUCTOR ELEMENT POLISHING METHOD AND MANUFACTURE OF RESIN GRINDING WHEEL USED THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a working method useful to polish and flatten semiconductor silicon wafers, wiring material formed on the silicon wafer, layer-to-layer insulation film formed at the time of making multilayer interconnection, and the like. SOLUTION: This polishing method is to use a resin grinding wheel having indispensable composition foaming property thermosetting resin 100 volume % provided with foaming property by self-foaming property or a foaming agent of 50 deg.C to 180 deg.C softening temperature and abrasive grains 50 to 200 volume % of an average diameter of 0.1 to 5 &mu;m. The manufacturing method of the resin grinding wheel is to smash independently the foaming thermosetting resin, which is provided with a foaming property by a self-foaming property or a foam agent of 50 deg.C to 180 deg.C softening temperature or together with the abrasive grains of an average of 0.5 to 5 &mu;m, to the foaming thermosetting resin of an average particle diameter of not more than 5 &mu;m and, after dispersedly mixing the two uniformly, the mixture is put into a mold and formed to have 40 to 60 volume m% of porosity under the temperature of 140 deg.C to 220 deg.C and pressure of 0.1 to 20 kg/cm<2> .
申请公布号 JPH10329031(A) 申请公布日期 1998.12.15
申请号 JP19970139454 申请日期 1997.05.29
申请人 HITACHI CHEM CO LTD;HITACHI LTD 发明人 OGATA MASAJI;MORIYA AKIHIRO;TANIMOTO MICHIO;MORIYAMA SHIGEO
分类号 B24B37/12;B24D3/28;H01L21/304;H01L21/3205;H01L21/321;H01L21/768 主分类号 B24B37/12
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