发明名称 Gate drive circuit for an SCR
摘要 A gate drive circuit for a silicon controlled rectifier (SCR) connected in an a-c power circuit includes a voltage divider network connected between a d-c voltage source and the SCR for developing a varying voltage on a control node, depending upon whether the anode-to-cathode a-c voltage of the SCR is positive or negative. A first switching transistor, responsive to the control node voltage, controls conduction of a second switching transistor connected between the d-c voltage source and a voltage regulated driver circuit. In this way, a constant drive current is applied to the SCR gate only while the anode-to-cathode voltage of the SCR is positive.
申请公布号 US5850160(A) 申请公布日期 1998.12.15
申请号 US19970877623 申请日期 1997.06.18
申请人 YORK INTERNATIONAL CORPORATION 发明人 SCHNETZKA, HAROLD R.;NORBECK, DEAN K.;TOLLINGER, DONALD L.
分类号 H02M1/08;H02M7/155;(IPC1-7):H03K17/72 主分类号 H02M1/08
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