发明名称 |
Gate drive circuit for an SCR |
摘要 |
A gate drive circuit for a silicon controlled rectifier (SCR) connected in an a-c power circuit includes a voltage divider network connected between a d-c voltage source and the SCR for developing a varying voltage on a control node, depending upon whether the anode-to-cathode a-c voltage of the SCR is positive or negative. A first switching transistor, responsive to the control node voltage, controls conduction of a second switching transistor connected between the d-c voltage source and a voltage regulated driver circuit. In this way, a constant drive current is applied to the SCR gate only while the anode-to-cathode voltage of the SCR is positive.
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申请公布号 |
US5850160(A) |
申请公布日期 |
1998.12.15 |
申请号 |
US19970877623 |
申请日期 |
1997.06.18 |
申请人 |
YORK INTERNATIONAL CORPORATION |
发明人 |
SCHNETZKA, HAROLD R.;NORBECK, DEAN K.;TOLLINGER, DONALD L. |
分类号 |
H02M1/08;H02M7/155;(IPC1-7):H03K17/72 |
主分类号 |
H02M1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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