发明名称 |
FLASH EEPROM CELL & FABRICATION METHOD |
摘要 |
The flash EEPROM cell of split-gate type according to the present invention can prevent the degradation of the tunnel oxide film of the cell due to the band-to-band tunneling and the secondary hot carrier which are generated by a high electric field formed at the overlap region between the junction region and the gate electrode when programming and erasure operations are performed by a high voltage to the structure in which the tunneling region is separated from the channel with a thick insulation film. |
申请公布号 |
KR0168155(B1) |
申请公布日期 |
1998.12.15 |
申请号 |
KR19950005205 |
申请日期 |
1995.03.14 |
申请人 |
HYUNDAI ELECTRONICS IND. CO.,LTD |
发明人 |
AHN, BYUNG-JIN |
分类号 |
H01L27/115;H01L21/336;H01L29/423;H01L29/788;(IPC1-7):H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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